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Brian L Lu

from Oakland, CA
Age ~43
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Also known as:
Brian Long
Phone and address:
128 Indian Rd, Oakland, CA 94610
Related to:
Melissa Lu, 65Wendy Wen Lu, 76Thomas T Liang, 98Luanna L Liang, 66Lucy Lu, 68Christopher Y Liang, 66Moses H Siahaan, 57Chloe S LiangK YBenjamin L Lu, 39Scott Lu, 34Wei Lu, 57Charmian S Liang, 31Hong Lu, 56Lo C Liang, 92Howard Y LiangChloe S Liang, 35Jianhong Hu, 56Hong L Lu, 69
Connected to:
Agnes C Lu, 59Alina Q Lu, 27Anne B Lu, 85Ao L Lu, 80Augustus Lu, 34Baochuan Lu, 49Benli P Lu, 72Bin Lu, 54Cam T Lu, 59Carlos A Lu, 34

Brian Lu Phones & Addresses

  • 128 Indian Rd, Oakland, CA 94610
  • Piedmont, CA
  • Orange, CA
  • Los Angeles, CA
  • San Ramon, CA
  • Irvine, CA
  • San Francisco, CA
  • Chandler, AZ
  • Phoenix, AZ
  • Maricopa, AZ

Work

Company: Phi beta lambda-business organization - Berkeley, CA Aug 2010 Position: Internal vice president

Education

School / High School: University of California, Berkeley- Berkeley, CA May 2012 Specialities: B.S. in Chemical Engineering

Resumes

Resumes

Brian Lu Photo 1

Brian Lu

Brian Lu Photo 2

Brian Dunlavey L U Dunlavey Lu

Brian Lu Photo 3

Francis Lewis High School

Work:

Francis Lewis High School
Brian Lu Photo 4

Brian Lu

Brian Lu Photo 5

Data Analyst At Google

Position:
Data Analyst at Google
Location:
San Jose, California
Industry:
Chemicals
Work:
Google - Mountain View since Aug 2012
Data Analyst
LS9, Inc. - San Francisco Bay Area Jun 2011 - Aug 2011
Downstream Processes Intern
UC Berkeley Jun 2010 - Jan 2011
Undergraduate Researcher, Smit Group
Energy Resources Frontier Center for Carbon Capture Mar 2010 - Jan 2011
Web Designer
LS9, Inc. Jun 2009 - Jan 2010
Downstream and Database Intern
Education:
University of California, Berkeley 2008 - 2012
B.S., Chemical Engineering
Skills:
Gas Chromatography
Chemical Engineering
Matlab
PCR
Python
Protein Purification
Cell Culture
HPLC
Molecular Biology
Research
SQL
Data Analysis
Statistics
Programming
PowerPoint
Lifesciences
Java
Interests:
Energy Resources, Nanotechnology, Management, Programming, Photography, Badminton, Graphic Design, Website Design
Languages:
Chinese
Brian Lu Photo 6

Brian Lu

Location:
United States
Brian Lu Photo 7

Brian Lu

Location:
United States
Brian Lu Photo 8

Brian Lu

Location:
United States

Publications

Us Patents

Method Of Porogen Removal From Porous Low-K Films Using Uv Radiation

US Patent:
7208389, Apr 24, 2007
Filed:
Sep 26, 2003
Appl. No.:
10/672311
Inventors:
Adrianne K. Tipton - Fremont CA, US
Brian G. Lu - Fremont CA, US
Patrick A. Van Cleemput - Sunnyvale CA, US
Michelle T. Schulberg - Palo Alto CA, US
Qingguo Wu - Tualatin OR, US
Haiying Fu - West Linn OR, US
Feng Wang - Fremont CA, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 21/76
US Classification:
438409, 257E21273
Abstract:
Methods of preparing a porous low-k dielectric material on a substrate are provided. The methods involve the use of ultraviolet radiation to react with and remove porogen from a porogen containing precursor film, leaving a porous low-k dielectric matrix. Methods using oxidative conditions and non-oxidative conditions are described. The methods described may be used to remove porogen from porogen-containing precursor films. The porogen may be a hydrocarbon such as a terpene (e. g. , alpha-terpinene) or a norbornene (e. g. , ENB). The resulting porous low-k dielectric matrix can then be annealed to remove water and remaining silanols capped to protect it from degradation by ambient conditions, which methods will also be described.

Cvd Flowable Gap Fill

US Patent:
7629227, Dec 8, 2009
Filed:
Oct 26, 2007
Appl. No.:
11/925514
Inventors:
Feng Wang - Fremont CA, US
Victor Y. Lu - Santa Cruz CA, US
Brian Lu - Fremont CA, US
Nerissa Draeger - Milpitas CA, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 21/76
US Classification:
438452, 257E21559
Abstract:
Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrates and is then converted into a silicon oxide film. In certain embodiments, the methods involve using a catalyst, e. g. , a nucleophile or onium catalyst, in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant. Also provided are methods of converting the flowable film to a solid dielectric film. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

Method Of Forming Low-Temperature Conformal Dielectric Films

US Patent:
7678709, Mar 16, 2010
Filed:
Jul 24, 2007
Appl. No.:
11/881005
Inventors:
Brian Lu - Fremont CA, US
Collin Mui - Mountain View CA, US
Bunsen Nie - Fremont CA, US
Raihan Tarafdar - San Jose CA, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 21/31
H01L 21/469
US Classification:
438769, 257703, 257752
Abstract:
A deposition method modulates the reaction rate and thickness of highly conformal dielectric films deposited by forming a saturated catalytic layer on the surface and then exposing the surface to silicon-containing precursor gas and a reaction modulator, which may accelerate or quench the reaction. The modulator may be added before, after, or during exposure of the silicon-containing precursor gas. The film thickness after one cycle of deposition may be increased up to 20 times or decreased up to 20 times.

Density Gradient-Free Gap Fill

US Patent:
7888273, Feb 15, 2011
Filed:
Aug 6, 2007
Appl. No.:
11/834581
Inventors:
Feng Wang - Fremont CA, US
Victor Y. Lu - Santa Cruz CA, US
Brian Lu - Fremont CA, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 21/31
H01L 21/469
US Classification:
438778, 438781
Abstract:
Multi-cycle methods result in dense, seamless and void-free dielectric gap fill are provided. The methods involve forming liquid or flowable films that partially fill a gap, followed by a solidification and/or anneal process that uniformly densifies the just-formed film. The thickness of the layer formed is such that the subsequent anneal process creates a film that does not have a density gradient. The process is then repeated as necessary to wholly or partially fill or line the gap as desired. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios greater than about 6:1 with widths less than about 0. 13 μm.

Cvd Flowable Gap Fill

US Patent:
8187951, May 29, 2012
Filed:
Nov 24, 2009
Appl. No.:
12/625468
Inventors:
Feng Wang - Fremont CA, US
Victor Y. Lu - Santa Cruz CA, US
Brian Lu - Fremont CA, US
Nerissa Draeger - Fremont CA, US
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 21/76
US Classification:
438452, 257E21559
Abstract:
Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrates and is then converted into a silicon oxide film. In certain embodiments, the methods involve using a catalyst, e. g. , a nucleophile or onium catalyst, in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant. Also provided are methods of converting the flowable film to a solid dielectric film. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

Method And Apparatus For Growing Binary, Ternary And Quaternary Materials On A Substrate

US Patent:
20160068961, Mar 10, 2016
Filed:
Sep 5, 2014
Appl. No.:
14/478919
Inventors:
- Herzogenrath, DE
Lin Yang - Sunnyvale CA, US
Jerry Mack - Sunnyvale CA, US
Zia Karim - Sunnyvale CA, US
Brian Lu - Sunnyvale CA, US
International Classification:
C23C 16/52
C23C 16/455
Abstract:
Methods and systems for forming a material on a substrate are provided. Aspects of the methods involve the controlled introduction of a plurality of vapor reactants into a deposition chamber to form a material on the substrate having uniform surface roughness, conformality, thickness and composition. Aspects of the systems include a vapor feed component, a vapor distribution component, a containment component, and a controller configured to operate the systems to carry out the methods.

Device And Method For Manufacturing Nanostructures Consisting Of Carbon

US Patent:
20150140234, May 21, 2015
Filed:
Nov 19, 2014
Appl. No.:
14/547720
Inventors:
- Herzogenrath, DE
Brian Lu - Fremont CA, US
Kenneth Teo - Cambridge, GB
Nalin Rupesinghe - Cambridge, GB
International Classification:
C23C 16/50
C23C 16/26
C23C 16/46
C23C 16/455
C23C 16/515
US Classification:
427577, 118723 MP
Abstract:
The invention relates to a device for manufacturing nanostructures consisting of carbon, such as monolayers, multilayer sheet structures, tubes, or fibers having a gas inlet element () having a housing cavity () enclosed by housing walls (″), into which a gas feed line () opens, through which a gaseous, in particular carbonaceous starting material can be fed into the housing cavity (), having a plasma generator, which has components () arranged at least partially in the housing cavity (), which has at least one plasma electrode () to which electrical voltage can be applied, to apply energy to the gaseous starting material by igniting a plasma and thus convert it into a gaseous intermediate product, and having a gas outlet surface () having a plurality of gas outlet openings (), through which the gaseous intermediate product can exit out of the housing cavity (). A gas heating unit () is provided for assisting the conversion, which is arranged downstream of the components ().
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Brian L Lu from Oakland, CA, age ~43 Get Report