Wallace S Martin from Arlington, TX, age 80

Professional Records

Medicine Doctors

Wallace F. Martin

Specialties:

General Surgery

Work:

Gwinnett Surgical Associates
631 Professional Dr STE 300, Lawrenceville, GA 30046
(770) 962-9977 (phone), (770) 339-9804 (fax)

Gwinnett Surgery Center
631 Professional Dr STE 390, Lawrenceville, GA 30046
(770) 338-1666 (phone), (770) 338-1636 (fax)

Education:

Medical School
Emory University School of Medicine
Graduated: 1979

Procedures:

Appendectomy
Breast Biopsy
Breast Reduction
Gallbladder Removal
Hemorrhoid Procedures
Hernia Repair
Laparoscopic Appendectomy
Laparoscopic Gallbladder Removal
Mastectomy
Pilonidal Cyst Excision
Proctosigmoidoscopy
Skin Tags Removal
Small Bowel Resection
Thyroid Gland Removal
Varicose Vein Procedures

Conditions:

Abdominal Aortic Aneurysm
Abdominal Hernia
Appendicitis
Benign Neoplasm of Breast
Breast Disorders

Languages:

English
Spanish

Description:

Dr. Martin graduated from the Emory University School of Medicine in 1979. He works in Lawrenceville, GA and 1 other location and specializes in General Surgery. Dr. Martin is affiliated with Eastside Medical Center and Gwinnett Medical Center.

Resumes

Teacher

Industry:

Think Tanks

Work:

Capistrono Unified School District
Teacher

Laborer And Forklift Operator

Industry:

Environmental Services

Work:

A3M
Laborer and Forklift Operator

Wallace Martin

Skills:

Microsoft Word
Microsoft Excel

Wallace Martin

ISBN #

0838714463

Us Patents

Microelectromechanical Switch With Fixed Metal Electrode/Dielectric Interface With A Protective Cap Layer

US Patent:

6376787, Apr 23, 2002

Filed:

Aug 24, 2000

Appl. No.:

09/648288

Inventors:

Wallace W. Martin - Richardson TX
Yu-Pei Chen - Plano TX
Byron Williams - Plano TX
Jose Melendez - Plano TX
Darius L. Crenshaw - Allen TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01H 5700

US Classification:

200181, 29622, 200600, 333262

Abstract:

A Micro Electro-Mechanical System (MEMS) switch ( ) having a bottom electrode ( ) formed over a substrate ( ) and a thin protective cap layer ( ) disposed over the bottom electrode ( ). A dielectric material ( ) is disposed over the protective cap layer ( ) and a pull-down electrode ( ) is formed over the spacer ( ) and the dielectric material ( ). The protective cap layer ( ) prevents the oxidation of the bottom electrode ( ). The thin protective cap layer ( ) comprises a metal having an associated oxide with a high dielectric constant. A portion ( ) of the thin protective cap layer ( ) may oxidize during the formation of the dielectric material ( ), increasing the capacitance of the dielectric stack ( ).

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