Inventors:
Terry Hulseweh - Mesa AZ
Mel Miller - Mesa AZ
Assignee:
Motorola Inc. - Schaumburg IL
International Classification:
H01L 21265
H01L 21477
H01L 21324
Abstract:
Formation of defects in epi-layers above buried layers, particularly above arsenic buried layers, is substantially reduced by providing a brief high temperature Rapid Thermal Annealing (RTA) step after buried layer implantation, annealing-activation, and junction drive-in and before epi-layer growth. Among other things, the RTA step reduces the formation of arsenic precipitates which is frequently a consequence of slow cools commonly associated with conventional furnace activation-annealing, junction drive-in, and delineation oxidation prior to epi-layer growth.