Sorin Stefanescu

20110239772, Oct 6, 2011

Mar 31, 2010

12/751482

Anthony D. Kurtz - Saddle River NJ, US
Alexander A. Ned - Kinnelon NJ, US
Sorin Stefanescu - New Milford NJ, US
Nora Kurtz - Saddle River NJ, US

Kulite Semiconductor Products, Inc. - Leonia NJ

G01L 9/06
B23P 11/00

73721, 295921

A dual diaphragm pressure transducer, or sensor, with compensation for non-pressure effects is disclosed. The pressure sensor can include two pressure transducers located on separate portions of a chip. The first pressure transducer can be a differential pressure transducer, which produces a signal proportional to one or more applied pressures and includes other non-pressure effects. The second pressure transducer can be sealed in a hermetic chamber and thus can produce a signal proportional only to non-pressure effects. The signals can be combined to produce a signal proportional to the applied pressures with no non-pressure effects. The first and second pressure transducers can be physically and/or electrically isolated to improve sealing between the two pressure transducers and prevent pressure leaks therebetween.

20210048363, Feb 18, 2021

Aug 12, 2019

16/538123

- Leonia NJ, US
Sorin Stefanescu - New Milford NJ, US
Andrew Bemis - Upper Saddle River NJ, US
Scott Goodman - Wayne NJ, US

G01L 19/06
G01L 19/00

The disclosed technology includes an oil-filled pressure transducer assembly and an oil-filled compensating sensing element disposed near one another and attached to a common housing. The oil-filled pressure transducer assembly may receive and measure pressure media via a first oil-filled cavity and a protective diagram in communication with the pressure media. The compensating sensing element may be isolated from the pressure media. In certain example implementations, the compensating sensing element is configured to measure certain common error phenomena that are also measured by the oil-filled pressure transducer assembly, for example, due to acceleration, temperature, and/or vibration. In certain implementations, the signal measured by the compensating sensing element may be subtracted from the signal measured by the oil-filled pressure transducer assembly to provide a compensated output signal.

20210041318, Feb 11, 2021

Oct 26, 2020

17/079696

- Leonia NJ, US
Leo Geras - Pearl River NY, US
Sorin Stefanescu - New Milford NJ, US

G01L 19/06
G01L 9/00
G01L 19/00
G01L 19/14

Systems and methods are disclosed for packaging sensors for use in high temperature environments. In one example implementation, a sensor device includes a header; one or more feedthrough pins extending through the header; and a sensor chip disposed on a support portion of the header. The sensor chip includes one or more contact pads. The sensor device further includes one or more wire bonded interconnections in electrical communication with the respective one or more contact pads and the respective one or more feedthrough pins. The sensor device includes a first sealed enclosure formed by at least a portion of the header. The first sealed enclosure is configured for enclosing and protecting at last the one or more wire bonded interconnections and the one or more contact pads from an external environment.

20200011757, Jan 9, 2020

Aug 27, 2019

16/552172

- Leonia NJ, US
Leo Geras - Pearl River NY, US
Sorin Stefanescu - New Milford NJ, US

G01L 19/06
G01L 9/00
G01L 19/00

Systems and methods are disclosed for packaging sensors for use in high temperature environments. In one example implementation, a sensor device includes a header; one or more feedthrough pins extending through the header; and a sensor chip disposed on a support portion of the header. The sensor chip includes one or more contact pads. The sensor device further includes one or more wire bonded interconnections in electrical communication with the respective one or more contact pads and the respective one or more feedthrough pins. The sensor device includes a first sealed enclosure formed by at least a portion of the header. The first sealed enclosure is configured for enclosing and protecting at last the one or more wire bonded interconnections and the one or more contact pads from an external environment.

20190237358, Aug 1, 2019

Apr 8, 2019

16/378114

- Leonia NJ, US
Sorin Stefanescu - New Milford NJ, US
Joseph R. VanDeweert - Maywood NJ, US

H01L 21/762
H01L 27/146
H01L 27/12

A method for fabricating silicon-on-insulator (SOI) semiconductor devices, wherein the piezoresistive pattern is defined within a blanket doped layer after fusion bonding. This new method of fabricating SOI semiconductor devices is more suitable for simpler large scale fabrication as it provides the flexibility to select the device pattern/type at the latest stages of fabrication.

20190041288, Feb 7, 2019

Aug 2, 2017

15/667117

- Leonia NJ, US
Leo Geras - Pearl River NY, US
Sorin Stefanescu - New Milford NJ, US

G01L 19/06
G01L 9/00
G01L 19/00

Systems and methods are disclosed for packaging sensors for use in high temperature environments. In one example implementation, a sensor device includes a header; one or more feedthrough pins extending through the header; and a sensor chip disposed on a support portion of the header. The sensor chip includes one or more contact pads. The sensor device further includes one or more wire bonded interconnections in electrical communication with the respective one or more contact pads and the respective one or more feedthrough pins. The sensor device includes a first sealed enclosure formed by at least a portion of the header. The first sealed enclosure is configured for enclosing and protecting at last the one or more wire bonded interconnections and the one or more contact pads from an external environment.

20190033155, Jan 31, 2019

Oct 3, 2018

16/150485

- Leonia NJ, US
Sorin Stefanescu - New Milford NJ, US
Scott Goodman - Wayne NJ, US

G01L 19/06
G01L 19/04

Certain implementations of the disclosed technology include systems and methods for providing header assemblies for use with pressure sensors in high-temperature environments. Certain example implementations include a header assembly. The header assembly can include a header portion having a first side and a second side, the header portion including one or more bores extending through the header portion from the first side to the second side. In certain example implementations, one or more platinum header pins are disposed within and extending through the one or more bores of the header portion. In certain example implementations, the header assembly can include one or more brazing portions corresponding to the one or more platinum header pins. In certain example implementations, the platinum header pins are configured for electrical communication with corresponding electrodes of a leadless transducer element.

20180218988, Aug 2, 2018

Jan 29, 2018

15/882680

- Leonia NJ, US
Sorin Stefanescu - New Milford NJ, US

H01L 23/00

Systems and methods are disclosed for providing an interconnection for extending high-temperature use in sensors and other electronic devices. The interconnection includes a semiconductor layer; an ohmic contact layer disposed on a first region of the semiconductor layer; an insulating layer disposed on a second region of the semiconductor layer, where the second region differs from the first region; a metal layer disposed above at least the insulating layer and the ohmic contact layer; and a connecting conductive region disposed on the metal layer and in vertical alignment with a third region of the semiconductor layer. The third region differs from the first region and is offset from the ohmic contact layer at the first region. The offset is configured to extend an operational lifetime of the interconnection apparatus, particularly when the interconnection apparatus is exposed to high temperature environments.