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Sahana J Kenchappa

from Lexington, MA
Age ~48
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Also known as:
Sahana Castelino, Mike Mattera
Related to:
Mallika Merchant, 29Johncy Castelino, 68Johncy Castelino, 49
Connected to:
Doreswamy Kenchegowda, 61Rodney J Kenchen, 77Tiffany A Kenchen, 44Jamila Kenchi, 36Sheryl M Kenchik, 36Donald E Kencke, 81David Kency, 46Nataliya Kenda, 32Jeffrey A Kendal, 66Nick K Kendal, 39

Sahana Kenchappa Phones & Addresses

  • Lexington, MA
  • Burlington, MA
  • 4200 107Th Ave, Beaverton, OR 97005
  • 65 Winn St, Woburn, MA 01803 (781) 933-4022
  • 6207 Princess Cir, Wappingers Falls, NY 12590 (845) 297-4429
  • Poughkeepsie, NY
  • Clemson, SC
  • Portland, OR
  • 53 Donald Rd, Burlington, MA 01803

Work

Position: Clerical/White Collar

Education

Degree: High school graduate or higher

Publications

Us Patents

Bulk Acoustic Wave Filter With Reduced Nonlinear Signal Distortion

US Patent:
7535323, May 19, 2009
Filed:
Jul 10, 2006
Appl. No.:
11/484042
Inventors:
Bradley Barber - Acton MA, US
Sahana Kenchappa - Woburn MA, US
Russ Reisner - Newbury Park CA, US
Assignee:
Skyworks Solutions, Inc. - Irvine CA
International Classification:
H03H 9/54
US Classification:
333189, 310357, 333192
Abstract:
A filter circuit includes at least one series resonator having a first terminal and a second terminal, where the first and second terminals of the at least one series resonator are coupled to an input and an output of the filter circuit, respectively. The filter circuit further includes at least one shunt resonator having a first terminal and a second terminal, where the first terminal of the at least one shunt resonator is coupled to the input of the filter circuit and the second terminal of the at least one shunt resonator is coupled to ground. A polarity of the first terminal of the at least one series resonator and a polarity of the first terminal of the at least one shunt resonator are selected so as to reduce harmonic signal generation and other types of distortion in the filter circuit.

Acoustic Mirror For A Bulk Acoustic Wave Structure

US Patent:
20080211352, Sep 4, 2008
Filed:
May 9, 2008
Appl. No.:
12/151822
Inventors:
Bradley Barber - Acton MA, US
Paul P. Gehlert - Sterling MA, US
Sahana Kenchappa - Woburn MA, US
Christopher F. Shepard - Nashua NH, US
International Classification:
H01L 41/18
H01L 41/22
H01L 41/08
US Classification:
310335, 29 2535
Abstract:
According to one embodiment of the invention, an acoustic mirror structure situated in a bulk acoustic wave structure includes a number of alternating low acoustic impedance and high acoustic impedance layers situated on a substrate. Each high acoustic impedance layer includes a first mole percent of a primary metal and a second mole percent of a secondary metal, where the first mole percent of the primary metal is greater than the second mole percent of the secondary metal, and where the secondary metal causes each high acoustic impedance layer to have increased resistivity. According to this exemplary embodiment, the second mole percent of the secondary metal can cause only a minimal decrease in density of each high acoustic impedance layer. The increased resistivity of each high acoustic impedance layer can cause a reduction in electrical loss in the bulk acoustic wave structure.

Acoustic Mirror Structure For A Bulk Acoustic Wave Structure And Method For Fabricating Same

US Patent:
20080241365, Oct 2, 2008
Filed:
Apr 22, 2008
Appl. No.:
12/148836
Inventors:
Bradley Barber - Acton MA, US
Paul P. Gehlert - Sterling MA, US
Sahana Kenchappa - Woburn MA, US
Christopher F. Shepard - Nashua NH, US
International Classification:
B05D 5/12
US Classification:
4271261
Abstract:
According to one embodiment of the invention, an acoustic mirror structure situated in a bulk acoustic wave structure includes a number of alternating low acoustic impedance and high acoustic impedance layers situated on a substrate. Each high acoustic impedance layer includes a first mole percent of a primary metal and a second mole percent of a secondary metal, where the first mole percent of the primary metal is greater than the second mole percent of the secondary metal, and where the secondary metal causes each high acoustic impedance layer to have increased resistivity. According to this exemplary embodiment, the second mole percent of the secondary metal can cause only a minimal decrease in density of each high acoustic impedance layer. The increased resistivity of each high acoustic impedance layer can cause a reduction in electrical loss in the bulk acoustic wave structure.

Acoustic Mirror Structure For A Bulk Acoustic Wave Structure And Method For Fabricating Same

US Patent:
7414350, Aug 19, 2008
Filed:
Mar 3, 2006
Appl. No.:
11/367559
Inventors:
Bradley Barber - Acton MA, US
Paul P. Gehlert - Sterling MA, US
Sahana Kenchappa - Woburn MA, US
Christopher F. Shepard - Nashua NH, US
Assignee:
Skyworks Solutions, Inc. - Woburn MA
International Classification:
H01L 41/08
US Classification:
310324, 310334, 333187
Abstract:
According to one embodiment of the invention, an acoustic mirror structure situated in a bulk acoustic wave structure includes a number of alternating low acoustic impedance and high acoustic impedance layers situated on a substrate. Each high acoustic impedance layer includes a first mole percent of a primary metal and a second mole percent of a secondary metal, where the first mole percent of the primary metal is greater than the second mole percent of the secondary metal, and where the secondary metal causes each high acoustic impedance layer to have increased resistivity. According to this exemplary embodiment, the second mole percent of the secondary metal can cause only a minimal decrease in density of each high acoustic impedance layer. The increased resistivity of each high acoustic impedance layer can cause a reduction in electrical loss in the bulk acoustic wave structure.
Control profile
Sahana J Kenchappa from Lexington, MA, age ~48 Get Report