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Nigel P Hacker

from Livermore, CA
Age ~72
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Also known as:
Nigel Patrick Hacker, Nigel L Hacker, Nigel V Hacker
Phone and address:
3060 Verdala Dr, Livermore, CA 94550
(925) 449-1912
Related to:
Vicki Hacker, 68
Connected to:
Angel M Hacker, 42Ariel M Hacker, 36Barton C Hacker, 89Basil L Hacker, 38Bennett Hacker, 114Brad A Hacker, 49Carl S Hacker, 61Casiano Hacker-Cordon, 56Chelsey L Hacker, 34Colin A Hacker, 36

Nigel Hacker Phones & Addresses

  • 3060 Verdala Dr, Livermore, CA 94550 (925) 449-1912
  • 991 Lincoln St, Palo Alto, CA 94301 (650) 566-0510
  • San Martin, CA
  • Chelsea, MA
  • Lafayette, IN
  • Morgan Hill, CA
  • Alameda, CA
  • Santa Clara, CA

Resumes

Resumes

Nigel Hacker Photo 1

Nigel Hacker

Publications

Us Patents

Dielectric Films From Organohydridosiloxane Resins With Low Organic Content

US Patent:
6358559, Mar 19, 2002
Filed:
Jun 30, 2000
Appl. No.:
09/609437
Inventors:
Nigel P. Hacker - Palo Alto CA
Scott P. Lefferts - Sunnyvale CA
Lisa K. Figge - Menlo Park CA
Michael D. Slessor - Campbell CA
Assignee:
Honeywell International Inc. - Morristown NJ
International Classification:
B05D 302
US Classification:
427 58, 427240, 427379, 427387
Abstract:
A method of making a dielectric film on a substrate from a composition containing an organohydridosiloxane resin is presented. The organohydridosiloxane resins have a cage conformation and up to 40 mole percent of an organic substituent. The process of making a dielectric film includes forming a solution of a solvent and the organohydridosiloxane resin, dispensing the solution on a substrate, spinning the substrate, baking the substrate to remove the solvent, and curing the substrate to form the dielectric film. The dielectric films of the present invention exhibit dielectric constants of approximately 3 or lower.

Organohydridosiloxane Resins With Low Organic Content

US Patent:
6359099, Mar 19, 2002
Filed:
Jul 3, 2000
Appl. No.:
09/610567
Inventors:
Nigel P. Hacker - San Martin CA
Scott Lefferts - Sunnyvale CA
Lisa Figge - Menlo Park CA
Assignee:
Honeywell International Inc. - Morristown NJ
International Classification:
C08G 7712
US Classification:
528 21, 528 31
Abstract:
An organohydridosiloxane polymer having a cage conformation, between approximately 0. 1 to 40 mole percent carbon-containing substituent, and a dielectric constant of less than about 3. 0 is disclosed. Each silicon atom of the cage polymer is bonded to at least three oxygen atoms and to either a hydrogen atom or an organic substituent. By providing such a caged structure having essentially no hydroxyl or alkoxy substituents, either on the polymer backbone or at terminal silicon atoms, essentially no chain lengthening polymerization can occur in solution. Such organohydridosiloxane resins having a molecular weight in the range from about 400 to about 200,000 atomic mass units were formed using a dual phase solvent system and either a solid phase or a phase transfer catalyst to assist the condensation of hydridotrihalosilane with at least one organotrihalosilane.

Dielectric Films From Organohydridosiloxane Resins With High Organic Content

US Patent:
6361820, Mar 26, 2002
Filed:
Jun 30, 2000
Appl. No.:
09/609499
Inventors:
Nigel P. Hacker - Palo Alto CA
Scott P. Lefferts - Sunnyvale CA
Lisa K. Figge - Menlo Park CA
Michael D. Slessor - Campbell CA
Assignee:
Honeywell International Inc. - Morristown NJ
International Classification:
B05D 302
US Classification:
427 58, 427240, 427379, 427387
Abstract:
A method of making a dielectric film on a substrate from a composition containing an organohydridosiloxane resin is presented. The organohydridosiloxane resins have a cage conformation and 40 mole percent or greater of an organic substituent. The process of making a dielectric film includes forming a solution of a solvent and the organohydridosiloxane resin, dispensing the solution on a substrate, spinning the substrate, baking the substrate to remove the solvent, and curing the substrate to form the dielectric film. The dielectric films of the present invention exhibit dielectric constants of approximately 2. 8 or lower.

Spin-On-Glass Anti-Reflective Coatings For Photolithography

US Patent:
6365765, Apr 2, 2002
Filed:
Oct 27, 2000
Appl. No.:
09/698883
Inventors:
Teresa Baldwin - Fremont CA
Nigel Hacker - Palo Alto CA
Joseph Kennedy - San Jose CA
Richard Spear - San Jose CA
Assignee:
Honeywell International Inc. - Morristown NJ
International Classification:
C07F 718
US Classification:
556440, 528 40
Abstract:
Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic dyes incorporated into spin-on-glass materials. Suitable dyes are strongly absorbing over wavelength ranges around wavelengths such as 248 nm and 193 nm that may be used in photolithography. A method of making dyed spin-on-glass materials includes combining one or more organic dyes with alkoxysilane reactants during synthesis of the spin-on-glass materials.

Deposition Of Fluorosilsesquioxane Films

US Patent:
6440550, Aug 27, 2002
Filed:
Oct 18, 1999
Appl. No.:
09/420052
Inventors:
Nigel P. Hacker - Palo Alto CA
Assignee:
Honeywell International Inc. - Morristown NJ
International Classification:
B32B 300
US Classification:
4283126, 1062871, 423325
Abstract:
There is provided an array of fluoro-substituted silsesquioxane thin film precursors having a structure wherein fluoro groups are bonded to the silicon atoms of a silsesquioxane cage. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [FâSiO ] [HâSiO ] , wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. Also provided are films made from these precursors and objects comprising these films.

Dielectric Films For Narrow Gap-Fill Applications

US Patent:
6444495, Sep 3, 2002
Filed:
Jan 11, 2001
Appl. No.:
09/761529
Inventors:
Roger Leung - San Jose CA
Denis Endisch - Cupertino CA
Songyuan Xie - Newark CA
Nigel Hacker - Palo Alto CA
Yanpei Deng - Fremont CA
Assignee:
Honeywell International, Inc. - Morristown NJ
International Classification:
H01L 2144
US Classification:
438118, 438778
Abstract:
A colloidal suspension of nanoparticles composed of a dense material dispersed in a solvent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallow trench isolation applications. According to the methods of forming a dielectric material, the colloidal suspension is deposited on a substrate and dried to form a porous intermediate layer. The intermediate layer is modified by infiltration with a liquid phase matrix material, such as a spin-on polymer, followed by curing, by infiltration with a gas phase matrix material, followed by curing, or by curing alone, to provide a gap-filling, thermally stable, etch resistant dielectric material.

Deposition Of Organosilsesquioxane Films

US Patent:
6472076, Oct 29, 2002
Filed:
Oct 18, 1999
Appl. No.:
09/420218
Inventors:
Nigel P. Hacker - Palo Alto CA
Assignee:
Honeywell International Inc. - Morristown NJ
International Classification:
B32B 900
US Classification:
428447, 4283191, 427 58, 42725536, 427255392, 427402, 427387, 427577, 528 31, 524267, 524731
Abstract:
There is provided an array of alkyl substituted silsesquioxane thin film precursors having a structure wherein alkyl groups are bonded to the silicon atoms of a silsesquioxane cage. The alkyl groups may be the same as, or different than the other alkyl groups. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [RâSiO ] [HâSiO ] , wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. R is a C to C alkyl group. Also provided are films made from these precursors and objects comprising these films.

Novolac Polymer Planarization Films With High Temperature Stability

US Patent:
6506441, Jan 14, 2003
Filed:
Dec 12, 2000
Appl. No.:
09/735838
Inventors:
Nigel Hacker - San Martin CA
Todd Krajewski - Mountain View CA
Richard Spear - San Jose CA
Assignee:
Honeywell International Inc. - Morristown NJ
International Classification:
B05D 512
US Classification:
427 96, 4273855, 4302711, 430302
Abstract:
A process for forming a planarization film on a substrate that does not smoke or fume on heating includes applying a polymeric solution including a novolac resin having a weight average molecular weight between about 1000 and 3000 amu, which has been fractionated to remove molecules with molecular weight below about 350 amu, a surfactant selected from a group consisting of a non-fluorinated hydrocarbon, a fluorinated hydrocarbon and combinations thereof, and an optional organic solvent to a substrate, followed by heating the substrate.
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Nigel P Hacker from Livermore, CA, age ~72 Get Report