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Narayan Dass Taneja

from Long Beach, CA
Age ~85
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Also known as:
Narayan D Taneja, Narayan Kiran Taneja, Dass Taneja Narayan, Marayan D Taneja, Taneja Narayan, Paneja Naryan, Narayan A, Naryan Paneja
Phone and address:
6200 Seville Ct, Long Beach, CA 90803
(562) 498-0782
Related to:
Seena N SardesaiMatthew Mauro, 91Matthew Mauro, 56Patricia Runco, 53Narayan Sardesai, 86
Connected to:
Ankur Taneja, 34Hemant Taneja, 49Himani Taneja, 38Inder Taneja, 72Jessica S Taneja, 43Jugal K Taneja, 80Mumta Taneja, 43Nathan N Taneja, 43Pia TanejaPreet Taneja, 44

Narayan Taneja Phones & Addresses

  • 6200 Seville Ct, Lb, CA 90803 (562) 498-0782
  • 1724 Bluff Pl, Long Beach, CA 90802 (562) 606-2637
  • Signal Hill, CA
  • 18702 Arline Ave, Artesia, CA 90701 (562) 865-4203
  • Cerritos, CA
  • Tustin, CA
  • Stockton, CA
  • Huntington Beach, CA
  • Fountain Valley, CA
  • Los Angeles, CA
  • 6200 Seville Ct, Long Beach, CA 90803 (562) 413-0123

Work

Position: Professional/Technical

Education

Degree: Graduate or professional degree

Resumes

Resumes

Narayan Taneja Photo 1

Narayan Taneja

Publications

Us Patents

Position Sensing Detector For The Detection Of Light Within Two Dimensions

US Patent:
6815790, Nov 9, 2004
Filed:
Jan 10, 2003
Appl. No.:
10/340565
Inventors:
Peter S. Bui - Westminster CA
Narayan Dass Taneja - Long Beach CA
Assignee:
Rapiscan, Inc. - Hawthorne CA
International Classification:
H01L 310224
US Classification:
257459, 257129, 257458, 257466
Abstract:
The present invention improves the resolution and accuracy of the presently known two-dimensional position sensing detectors and delivers improved performance in the 1. 3 to 1. 55 micron wavelength region. The present invention is an array of semiconductor layers with four electrodes, the illustrative embodiment comprising a semi-insulating substrate semiconductor base covered by a semiconductor buffered layer, the buffered layer further covered by a semiconductor absorption layer and the absorption layer covered with a semiconductor layer. Four electrodes are placed on this semiconductor array: two on the top layer parallel to each other and near the ends of opposite edges, and two etched in the buffered layer, parallel to each other and perpendicular to the first set. The layers are doped as to make a p-n junction in the active area. Substantially all the layers, excepting the semi-insulating substrate layer, are uniformly resistive.

Front Illuminated Back Side Contact Thin Wafer Detectors

US Patent:
7057254, Jun 6, 2006
Filed:
Mar 10, 2004
Appl. No.:
10/797324
Inventors:
Peter Steven Bui - Westminster CA, US
Narayan Dass Taneja - Long Beach CA, US
Assignee:
UDT Sensors, Inc. - Hawthorne CA
International Classification:
H01L 27/14
US Classification:
257443, 257414, 257431
Abstract:
The present invention is directed toward a detector structure, detector arrays, a method of detecting incident radiation, and a method of manufacturing the detectors. The present invention comprises several embodiments that provide for reduced radiation damage susceptibility, decreased affects of cross-talk, and increased flexibility in application. In one embodiment, the present invention comprises a plurality of front side illuminated photodiodes, optionally organized in the form of an array, with both the anode and cathode contact pads on the back side. The front side illuminated, back side contact photodiodes have superior performance characteristics, including less radiation damage, less crosstalk using a suction diode, and reliance on reasonably thin wafers. Another advantage of the photodiodes of the present invention is that high density with high bandwidth applications can be effectuated.

Thin Wafer Detectors With Improved Radiation Damage And Crosstalk Characteristics

US Patent:
7242069, Jul 10, 2007
Filed:
May 4, 2004
Appl. No.:
10/838987
Inventors:
Peter Steven Bui - Westminster CA, US
Narayan Dass Taneja - Long Beach CA, US
Assignee:
UDT Sensors, Inc. - Hawthorne CA
International Classification:
H01L 31/00
US Classification:
257443, 257414, 257428, 257431, 257E31001, 438 48, 438 57, 438 64, 438 66
Abstract:
The present invention provides for reduced radiation damage susceptibility, decreased affects of crosstalk, and increased flexibility in application. In one embodiment, the present invention includes a back side illuminated photodiode array with a back side etching that minimizes the active area layer, thereby decreasing the affects of crosstalk. The back side etching is preferably, but by no way of limitation, in the form of “U” or “V” shaped grooves. The back side illuminated with back side etching (BSL-BE) photodiodes are implemented in an array and have superior performance characteristics, including less radiation damage due to a thinner active area, and less crosstalk due to shorter distances for minority carriers to diffuse to the PN junction.

Photodiode With Controlled Current Leakage

US Patent:
7256470, Aug 14, 2007
Filed:
Mar 16, 2005
Appl. No.:
11/081219
Inventors:
Peter Steven Bui - Westminster CA, US
Narayan Dass Taneja - Long Beach CA, US
Assignee:
UDT Sensors, Inc. - Hawthorne CA
International Classification:
H01L 31/06
US Classification:
257461, 257428, 257431
Abstract:
The present invention is directed towards radiation detectors and methods of detecting incident radiation. In particular the present invention is directed towards photodiodes with controlled current leakage detector structures and a method of manufacturing photodiodes with controlled current leakage detector structures. The photodiodes of the present invention are advantageous in that they have special structures to substantially reduce detection of stray light. Additionally, the present invention gives special emphasis to the design, fabrication, and use of photodiodes with controlled leakage current.

Edge Illuminated Photodiodes

US Patent:
7279731, Oct 9, 2007
Filed:
May 15, 2006
Appl. No.:
11/383485
Inventors:
Peter Steven Bui - Westminster CA, US
Narayan Dass Taneja - Long Beach CA, US
Manoocher Mansouri - Studio City CA, US
Assignee:
UDT Sensors, Inc. - Hawthorne CA
International Classification:
H01L 31/062
H01L 31/113
H01L 31/0232
H01L 31/06
US Classification:
257292, 257432, 257461
Abstract:
This invention comprises plurality of edge illuminated photodiodes. More specifically, the photodiodes of the present invention comprise novel structures designed to minimize reductions in responsivity due to edge surface recombination and improve quantum efficiency. The novel structures include, but are not limited to, angled facets, textured surface regions, and appropriately doped edge regions.

Photodiode With Controlled Current Leakage

US Patent:
7470966, Dec 30, 2008
Filed:
Jul 6, 2007
Appl. No.:
11/774002
Inventors:
Peter Steven Bui - Westminster CA, US
Narayan Dass Taneja - Long Beach CA, US
Assignee:
UDT Sensors, Inc. - Hawthorne CA
International Classification:
H01L 31/06
US Classification:
257461, 257428, 257431
Abstract:
The present invention is directed towards radiation detectors and methods of detecting incident radiation. In particular the present invention is directed towards photodiodes with controlled current leakage detector structures and a method of manufacturing photodiodes with controlled current leakage detector structures. The photodiodes of the present invention are advantageous in that they have special structures to substantially reduce detection of stray light. Additionally, the present invention gives special emphasis to the design, fabrication, and use of photodiodes with controlled leakage current.

Deep Diffused Thin Photodiodes

US Patent:
7576369, Aug 18, 2009
Filed:
Oct 25, 2005
Appl. No.:
11/258848
Inventors:
Peter Steven Bui - Westminster CA, US
Narayan Dass Taneja - Long Beach CA, US
Assignee:
UDT Sensors, Inc. - Hawthorne CA
International Classification:
H01L 29/74
US Classification:
257127, 257184, 257233, 257292, 257448, 257E31115
Abstract:
This invention comprises photodiodes, optionally organized in the form of an array, including p+ deep diffused regions or p+ and n+ deep diffused regions. More specifically, the invention permits one to fabricate thin 4 inch and 6 inch wafer using the physical support provided by a n+ deep diffused layer and/or p+ deep diffused layer. Consequently, the present invention delivers high device performances, such as low crosstalk, low radiation damage, high speed, low leakage dark current, and high speed, using a thin active layer.

Front Illuminated Back Side Contact Thin Wafer Detectors

US Patent:
7579666, Aug 25, 2009
Filed:
Apr 10, 2006
Appl. No.:
11/401099
Inventors:
Peter Steven Bui - Westminster CA, US
Narayan Dass Taneja - Long Beach CA, US
Assignee:
UDT Sensors, Inc. - Hawthorne CA
International Classification:
H01L 31/00
US Classification:
257443, 257E31001
Abstract:
The present invention is directed toward a detector structure, detector arrays, a method of detecting incident radiation, and a method of manufacturing the detectors. The present invention comprises several embodiments that provide for reduced radiation damage susceptibility, decreased affects of cross-talk, and increased flexibility in application. In one embodiment, the present invention comprises a plurality of front side illuminated photodiodes, optionally organized in the form of an array, with both the anode and cathode contact pads on the back side. The front side illuminated, back side contact photodiodes have superior performance characteristics, including less radiation damage, less crosstalk using a suction diode, and reliance on reasonably thin wafers. Another advantage of the photodiodes of the present invention is that high density with high bandwidth applications can be effectuated.
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Narayan Dass Taneja from Long Beach, CA, age ~85 Get Report