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Leonard Levenson Phones & Addresses

  • 5750 Harbor Pines Pt, Colorado Springs, CO 80919 (719) 594-6824
  • 975 Point Of The Pines Dr, Colorado Springs, CO 80919
  • Colorado Spgs, CO
  • Bothell, WA

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Llp

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Resumes

Leonard Levenson Photo 1

Leonard Levenson

Skills:
Llp

Publications

Us Patents

Ionized Cluster Beam Deposition Of Sapphire And Silicon Layers

US Patent:
53806832, Jan 10, 1995
Filed:
Oct 2, 1992
Appl. No.:
7/955603
Inventors:
Scott M. Tyson - Colorado Springs CO
Richard Y. Kwor - Colorado Springs CO
Leonard L. Levenson - Colorado Springs CO
Assignee:
United Technologies Corporation - Hartford CT
International Classification:
H01L 2100
H01L 2102
H01L 21302
H01L 21463
US Classification:
437236
Abstract:
Sapphire, a highly stable oxide of aluminum having the chemical formula of Al. sub. 2 O. sub. 3, is placed in a crucible. The crucible is heated to vaporize the sapphire therein. The sapphire vapor is ejected through a nozzle in the crucible and into a region having a vacuum pressure of approximately 10. sup. -5 Torr or less. As the vapor leaves the crucible through the nozzle, atom aggregates or clusters are formed through a supercooled phenomenon due to adiabatic expansion. The vacuum region has disposed therein a substrate of silicon. The sapphire vapor is accelerated towards the substrate where it deposits on a surface of the substrate in a uniformly distributed thin layer.

Ionized Cluster Beam Deposition Of Sapphire

US Patent:
53506073, Sep 27, 1994
Filed:
Oct 2, 1992
Appl. No.:
7/955607
Inventors:
Scott M. Tyson - Colorado Springs CO
Richard Y. Kwor - Colorado Springs CO
Leonard L. Levenson - Colorado Springs CO
Assignee:
United Technologies Corporation - Hartford CT
International Classification:
C23C 1648
US Classification:
427566
Abstract:
Sapphire, a highly stable oxide of aluminum having the chemical formula of Al. sub. 2 O. sub. 3, is placed in a crucible. The crucible is heated to vaporize the sapphire therein. The sapphire vapor is ejected through a nozzle in the crucible and into a region having a vacuum pressure of approximately 10. sup. -5 Torr or less. As the vapor leaves the crucible through the nozzle, atom aggregates or clusters are formed through a supercooled phenomenon due to adiabatic expansion. The vacuum region has disposed therein a substrate comprised of one of various materials, including metals, oxides or silicon. The sapphire vapor is accelerated towards the substrate where it deposits on a surface of the substrate in a uniformly distributed thin layer.
Leonard L Levenson from Colorado Springs, CODeceased Get Report