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Doyle C Capell

from Hillsborough, NC
Age ~60
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Also known as:
Doyle Cynthia Capell, Doyle Craig Capell, Doyle Cyndy Capell, Doyle Cindy Capell, Doyle Debra Capell, Craig D Capell, Craig Capell Doyle, Craig Capel, Craig Apel, Tara Mckibben
Phone and address:
111 Berwick Pl, Hillsborough, NC 27278
Related to:
Terril JohnsonZachary Johnson, 28David Mckibben, 40Terri Johnson, 69Tara Mckibben, 69
Connected to:
Adria Capell, 41Amanda Capellan, 31Andre C Capella, 90Devan G Capella, 39Eric A Capellan, 52Eric J Capella, 38Eugene Capella, 94Geoff Capell, 53Jason J Capella, 37Jason A Capellan

Doyle Capell Phones & Addresses

  • 111 Berwick Pl, Hillsborough, NC 27278
  • Oak Island, NC
  • Bracey, VA
  • North Wilkesboro, NC
  • 4615 Lazyriver Dr, Durham, NC 27712 (919) 471-3194
  • Cary, NC

Publications

Us Patents

Stable Power Devices On Low-Angle Off-Cut Silicon Carbide Crystals

US Patent:
20100133550, Jun 3, 2010
Filed:
Nov 20, 2009
Appl. No.:
12/622861
Inventors:
Qingchun Zhang - Cary NC, US
Anant Agarwal - Chapel Hill NC, US
Doyle Craig Capell - Durham NC, US
Albert Burk - Chapel Hill NC, US
Joseph Sumakeris - Cary NC, US
Michael O'Loughlin - Chapel Hill NC, US
International Classification:
H01L 29/24
H01L 21/04
US Classification:
257 77, 438478, 257E29104, 257E21065
Abstract:
A silicon carbide-based power device includes a silicon carbide drift layer having a planar surface that forms an off-axis angle with a direction of less than 8.

Field Effect Transistor Devices With Low Source Resistance

US Patent:
20120280252, Nov 8, 2012
Filed:
May 6, 2011
Appl. No.:
13/102510
Inventors:
Doyle Craig Capell - Hillsborough NC, US
Lin Cheng - Chapel Hill NC, US
Sarit Dhar - Cary NC, US
Charlotte Jonas - Morrisville NC, US
Anant Agarwal - Chapel Hill NC, US
John Palmour - Cary NC, US
International Classification:
H01L 29/12
H01L 29/06
H01L 29/772
US Classification:
257 77, 257329, 257494, 257E29068, 257E29005, 257E29262
Abstract:
A semiconductor device includes a drift layer having a first conductivity type, a well region in the drift layer having a second conductivity type opposite the first conductivity type, and a source region in the well region, The source region has the first conductivity type and defines a channel region in the well region. The source region includes a lateral source region adjacent the channel region and a plurality of source contact regions extending away from the lateral source region opposite the channel region. A body contact region having the second conductivity type is between at least two of the plurality of source contact regions and is in contact with the well region. A source ohmic contact overlaps at least one of the source contact regions and the body contact region. A minimum dimension of a source contact area of the semiconductor device is defined by an area of overlap between the source ohmic contact and the at least one source contact region.

Field Effect Transistor Devices With Low Source Resistance

US Patent:
20120280270, Nov 8, 2012
Filed:
May 16, 2011
Appl. No.:
13/108440
Inventors:
Doyle Craig Capell - Hillsborough NC, US
Lin Cheng - Chapel Hill NC, US
Sarit Dhar - Cary NC, US
Charlotte Jonas - Morrisville NC, US
Anant Agarwal - Chapel Hill NC, US
John Palmour - Cary NC, US
International Classification:
H01L 29/739
H01L 29/78
US Classification:
257133, 257288, 257E29197, 257E29255
Abstract:
A semiconductor device includes a drift layer having a first conductivity type, a well region in the drift layer having a second conductivity type opposite the first conductivity type, and a source region in the well region, The source region has the first conductivity type and defines a channel region in the well region. The source region includes a lateral source region adjacent the channel region and a plurality of source contact regions extending away from the lateral source region opposite the channel region. A body contact region having the second conductivity type is between at least two of the plurality of source contact regions and is in contact with the well region. A source ohmic contact overlaps at least one of the source contact regions and the body contact region. A minimum dimension of a source contact area of the semiconductor device is defined by an area of overlap between the source ohmic contact and the at least one source contact region.

Low Loss Electronic Devices Having Increased Doping For Reduced Resistance And Methods Of Forming The Same

US Patent:
20140266403, Sep 18, 2014
Filed:
Mar 15, 2013
Appl. No.:
13/835342
Inventors:
Cree, Inc. - , US
Doyle Craig Capell - Hillsborough NC, US
International Classification:
H01L 29/872
H03K 17/74
H01L 21/04
US Classification:
327493, 257 77, 438510
Abstract:
An electronic device includes a drift region having a first conductivity type and a grid including a plurality of doped regions formed in the drift region and having a second conductivity type. The doped regions have a dopant concentration greater than 2.2×10cm. Related methods are also disclosed.
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Doyle C Capell from Hillsborough, NC, age ~60 Get Report