Chyu Jiuh Torng

6373667, Apr 16, 2002

Aug 14, 2000

09/637208

Cheng Tzong Horng - San Jose CA
Po-Kang Wang - San Jose CA
Chyu Jiuh Torng - Pleasanton CA
Kochan Ju - Fremont CA
Yimin Guo - San Jose CA

Headway Technologies, Inc. - Milpitas CA

G11B 5127

36032722

A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer.

6466418, Oct 15, 2002

Feb 11, 2000

09/502035

Cheng T. Horng - San Jose CA
Min Li - Fremont CA
Simon H. Liao - Fremont CA
Ru-Ying Tong - San Jose CA
Chyu Jiuh Torng - Pleasanton CA
Rongfu Xiao - Fremont CA

Headway Technologies, Inc. - Milpitas CA

G11B 539

36032412, 2960314

A method for forming a specularly reflecting bottom spin valve magnetoresistive (SVMR) sensor element with continuous spacer exchange hard bias and a specularly reflecting bottom spin valve magnetoresistive (SVMR) sensor element fabricated according to that method. To practice the method, there is provided a substrate upon which is formed a seed layer, upon which is formed an antiferromagnetic pinning layer, upon which is formed a ferromagnetic pinned layer, upon which is formed a non-magnetic spacer layer, upon which is formed a ferromagnetic free layer, upon which is formed a specularly reflecting and capping layer. The width of the sensor element is defined by a pair of conducting leads aligned upon a pair of continuous spacer exchange hard bias layers.

6583966, Jun 24, 2003

Sep 20, 2001

09/956360

Chyu Jiuh Torng - Pleasanton CA

Headway Technologies, Inc. - Milpitas CA

G11B 5139

360317, 360126

A high data-rate stitched pole magnetic read/write-head combining sputtered and plated high magnetic moment materials and a method for fabricating same. The plating and stitching aspects of this fabrication allow the formation of a very narrow write-head, while the sputtering permits the use of high magnetic moment materials having high resistivity and low coercivity.

6632474, Oct 14, 2003

Oct 13, 2000

09/689932

Cheng T. Horng - San Jose CA
Chen-Jung Chien - Sunnyvale CA
Chyu Jiuh Torng - Pleasanton CA
Ru-Ying Tong - San Jose CA

Headway Technologies, Inc. - Milpitas CA

B05D 512

427131, 427129, 427132, 427130

A method for forming a thin conductive lead layer of high sheet conductivity, high hardness, high melting point, high corrosion resistance and lacking the propensity for smearing, oozing, electromigration and nodule formation. Said lead layer is formed upon the hard magnetic longitudinal bias layer of an abutted junction spin-valve type magnetoresistive read head and said read head is therefore suitable for reading high density recorded disks at high RPM.

7288281, Oct 30, 2007

Sep 2, 2004

10/933031

Min Li - Dublin CA, US
Kunliang Zhang - Santa Clara CA, US
Cheng T. Horng - San Jose CA, US
Chyu Jiuh Torng - Pleasanton CA, US
Yu-Hsia Chen - San Jose CA, US
Ru-Ying Tong - San Jose CA, US

Headway Technologies, Inc. - Milpitas CA

B05D 5/12

427127, 427128, 427131, 36034212

Fe rich CoFe can be used in AP1 to enhance CPP GMR. However, this is found to degrade the electro-migration performance of the device. This problem has been solved by using an AP1 that is a laminate of several CoFe(25%) layers, separated from one another by copper layers. Ultra-thin layers of iron-rich CoFe are then inserted at all the copper-CoFe interfaces.

8169816, May 1, 2012

Sep 15, 2009

12/584952

Tai Min - San Jose CA, US
Wai-Ming J. Kan - San Ramon CA, US
David Heim - Redwood City CA, US
Chyu Jiuh Torng - Pleasanton CA, US

MagIC Technologies, Inc. - Milpitas CA

G11C 11/00

365158, 365148, 365171

A cladding structure for a conductive line used to switch a free layer in a MTJ is disclosed and includes two cladding sidewalls on two sides of the conductive line, a top cladding portion on a side of the conductive line facing away from the MTJ, and a highly conductive, non-magnetic spacing control layer formed between the MTJ and conductive line. The spacing control layer has a thickness of 0. 02 to 0. 12 microns to maintain the distance separating free layer and conductive line between 0. 03 and 0. 15 microns. The spacing control layer is aligned parallel to the conductive line and contacts a plurality of MTJ elements in a row of MRAM cells. Half-select error problems are avoided while maintaining high write efficiency. A spacing control layer may be formed between a word line and a bottom electrode in a top pinned layer or dual pinned layer configuration.

20030085131, May 8, 2003

Nov 6, 2001

09/993408

Feiyue Li - Fremont CA, US
Chyu Torng - Pleasanton CA, US

Headway Technologies, Inc.

C25D005/02
C25C007/00
C25B009/00
C25D017/00

205/259000, 205/119000, 204/242000

High density magnetic recording requires the write head materials to have high saturation magnetic flux density. Preparation of such materials has been achieved by providing an aqueous solution of nickel, iron, and cobalt salts, each present within a specified concentration range, together with selected additives. When used, under the specified operating conditions, as the electrolyte during electro-deposition, said solution provides a ferromagnetic layer having improved magnetic properties, particularly high saturation magnetic flux density. One embodiment of the process teaches formation of pole tips for use in a magnetic write head.

20120181537, Jul 19, 2012

Jan 19, 2011

12/930877

Wei Cao - San Jose CA, US
Cheng T. Horng - San Jose CA, US
Witold Kula - Sunnyvale CA, US
Chyu Jiuh Torng - Pleasanton CA, US

H01L 29/82
H01L 21/36
H01L 29/04

257 53, 438 3, 257421, 257E29003, 257E29323, 257E21461

A MTJ in an MRAM array is disclosed with a composite free layer having a lower crystalline layer contacting a tunnel barrier and an upper amorphous NiFeX layer for improved bit switching performance. The crystalline layer is Fe, Ni, or FeB with a thickness of at least 6 Angstroms which affords a high magnetoresistive ratio. The X element in the NiFeX layer is Mg, Hf, Zr, Nb, or Ta with a content of 5 to 30 atomic %. NiFeX thickness is preferably between 20 to 40 Angstroms to substantially reduce bit line switching current and number of shorted bits. In an alternative embodiment, the crystalline layer may be a Fe/NiFe bilayer. Optionally, the amorphous layer may have a NiFeM/NiFeMconfiguration where Mand Mare Mg, Hf, Zr, Nb, or Ta, and M1 is unequal to M2. Annealing at 300 C. to 360 C. provides a high magnetoresistive ratio of about 150%.