Search

Charles A Choate

from Underhill, VT
Age ~77

Charles Choate Phones & Addresses

  • 68 Repa Rd, Underhill, VT 05489 (802) 899-4004
  • Barnet, VT
  • 68 Repa Rd, Underhill, VT 05489

Resumes

Resumes

Charles Choate Photo 1

Business Owner

Work:
Ccc Precision Welding
Business Owner
Charles Choate Photo 2

Instructor Pilot

Work:
Us Navy
Instructor Pilot
Charles Choate Photo 3

Charles Choate

Charles Choate Photo 4

Charles Choate

Charles Choate Photo 5

Charles Choate

Charles Choate Photo 6

Charles Choate

Location:
United States
Charles Choate Photo 7

Charles Choate

Location:
United States

Business Records

Name / Title
Company / Classification
Phones & Addresses
Charles Choate
CHOATE ENTERPRISES, LLC
Charles S. Choate
YOUR WISECHOICE TRANSPORTATION CO
Charles Choate
Incorporator
GERALD REFRIGERATION, INC

Publications

Wikipedia

Charles E. Choate

Charles E. Choate (August 31, 18651929) was an U.S. architect who worked in Georgia, Florida, and Alabama. He lived for ten years in Tennille, Georgia. ...

Us Patents

Silane Oxidation Exhaust Trap

US Patent:
6508997, Jan 21, 2003
Filed:
Dec 14, 2000
Appl. No.:
09/737128
Inventors:
Charles A. Choate - Underhill VT
Michael R. Lunn - Milton VT
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
C01B 3312
US Classification:
423337, 422171, 422172
Abstract:
An oxidation exhaust trap for filtering a particulate product of a first gas contacted with a gaseous oxidizing agent. The oxidation exhaust trap has a vessel having an interior cavity. The vessel further having a first inlet in communication with the interior cavity for introduction of the first gas into the interior cavity and a second inlet in communication with the interior cavity for introduction of the gaseous oxidizing agent into the interior cavity, the gaseous oxidizing agent mixing with the first gas thereby causing oxidation of the first gas for producing the particulate product suspended in a gaseous product. Lastly, the vessel has an outlet in communication with the interior cavity. A filter is disposed in the interior cavity for filtering the particulate product from the gaseous product which is exhausted through the outlet. In a preferred embodiment of the present invention, the first gas is silane and the gaseous oxidizing agent is air.

Incorporation Of An Impurity Into A Thin Film

US Patent:
20030213433, Nov 20, 2003
Filed:
May 17, 2002
Appl. No.:
10/063846
Inventors:
Charles Choate - Underhill VT, US
Timothy Hayes - Hinesburg VT, US
Michael Lunn - Georgia VT, US
Paul Nisson - Colchester VT, US
Dean Siegel - Colchester VT, US
Michael Triplett - Colchester VT, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
C23C016/00
US Classification:
118/7230VE, 118/726000
Abstract:
The present invention describes a method of forming a thin film on a substrate arranged in a deposition system comprising the step of introducing a pre-determined amount of an impurity in a confined volume in the deposition system. One or more gases are introduced into the deposition system for forming the thin film. The impurity is removed from the confined volume in a gas phase during formation of the thin film. The impurity in the gas phase is incorporated into the thin film.

Incorporation Of An Impurity Into A Thin Film

US Patent:
20040144313, Jul 29, 2004
Filed:
Dec 12, 2003
Appl. No.:
10/734504
Inventors:
Charles Choate - Underhill VT, US
Timothy Hayes - Hinesburg VT, US
Michael Lunn - Georgia VT, US
Paul Nisson - Colchester VT, US
Dean Siegel - Colchester VT, US
Michael Triplett - Colchester VT, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
C23C016/00
H01L021/20
H01L021/04
US Classification:
118/716000, 438/384000, 118/726000, 438/510000
Abstract:
The present invention describes a method of forming a thin film on a substrate arranged in a deposition system comprising the step of introducing a pre-determined amount of an impurity in a confined volume in the deposition system. One or more gases are introduced into the deposition system for forming the thin film. The impurity is removed from the confined volume in a gas phase during formation of the thin film. The impurity in the gas phase is incorporated into the thin film.

High Conductance Trap

US Patent:
61029890, Aug 15, 2000
Filed:
Jul 10, 1997
Appl. No.:
8/889949
Inventors:
Charles A. Choate - Underhill VT
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
B01D 4600
US Classification:
95273
Abstract:
A high conductance trap for removing particulates from the effluent of a semiconductor processing system. The trap includes a housing having a gas inlet, a filtering arrangement, and a gas outlet. The gas inlet and gas outlet are arranged in an inline configuration to increase conductance through the trap, thereby enhancing the filtering efficiency of the filtering arrangement. Cooling coils are disposed immediately adjacent the gas inlet to immediately cool the effluent as it enters the trap, thereby further increasing the filtering efficiency of the filter arrangement.

Silane Oxidation Exhaust Trap

US Patent:
62248340, May 1, 2001
Filed:
Apr 16, 1998
Appl. No.:
9/061628
Inventors:
Charles A. Choate - Underhill VT
Michael R Lunn - Milton VT
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
B01D 5300
B01D 5346
B01D 5334
US Classification:
422171
Abstract:
An oxidation exhaust trap for filtering a particulate product of a first gas contacted with a gaseous oxidizing agent. The oxidation exhaust trap has a vessel having an interior cavity. The vessel further having a first inlet in communication with the interior cavity for introduction of the first gas into the interior cavity and a second inlet in communication with the interior cavity for introduction of the gaseous oxidizing agent into the interior cavity, the gaseous oxidizing agent mixing with the first gas thereby causing oxidation of the first gas for producing the particulate product suspended in a gaseous product. Lastly, the vessel has an outlet in communication with the interior cavity. A filter is disposed in the interior cavity for filtering the particulate product from the gaseous product which is exhausted through the outlet. In a preferred embodiment of the present invention, the first gas is silane and the gaseous oxidizing agent is air.
Charles A Choate from Underhill, VT, age ~77 Get Report