US Patent:
20030213433, Nov 20, 2003
Inventors:
Charles Choate - Underhill VT, US
Timothy Hayes - Hinesburg VT, US
Michael Lunn - Georgia VT, US
Paul Nisson - Colchester VT, US
Dean Siegel - Colchester VT, US
Michael Triplett - Colchester VT, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
C23C016/00
Abstract:
The present invention describes a method of forming a thin film on a substrate arranged in a deposition system comprising the step of introducing a pre-determined amount of an impurity in a confined volume in the deposition system. One or more gases are introduced into the deposition system for forming the thin film. The impurity is removed from the confined volume in a gas phase during formation of the thin film. The impurity in the gas phase is incorporated into the thin film.