Bon Taek Koo

7692139, Apr 6, 2010

Oct 15, 2007

11/872576

Bon Woong Koo - Andover MA, US
Frank Sinclair - Quincy MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01J 37/317

250251, 25049221

A system for ion beam neutralization includes a beamguide configured to transport an ion beam through a dipole field, a first array of magnets and a second array of magnets configured to generate a multi-cusp magnetic field, the first array of magnets being on a first side of the ion beam path and the second array of magnets being on a second side of the ion beam path. The system may further include a charged particle source having one or more apertures configured to inject charged particles into the ion beam. The system may furthermore align the one or more apertures with at least one of the first array of magnets and the second array of magnets to align the injected charged particles from the charged particle source with one or more magnetic regions for an effective charged particle diffusion into the ion beam.

7700925, Apr 20, 2010

Dec 28, 2007

11/966312

Svetlana Radovanov - Marblehead MA, US
Bon Woong Koo - Andover MA, US
Frank Sinclair - Quincy MA, US
Victor M. Benveniste - Gloucester MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01J 37/08

250423R, 250424, 250427

Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation, the apparatus including an ion source having a hot cathode and a high frequency plasma generator, wherein the ion source has multiple modes of operation.

7878145, Feb 1, 2011

Jun 2, 2004

10/858582

Ziwei Fang - Beverly MA, US
Edmund J. Winder - Waltham MA, US
Daniel Distaso - Merrimac MA, US
Ludovic Godet - Treize Vents, FR
Bon Woong Koo - Andover MA, US
Jay T. Scheuer - Rowley MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

C23C 16/00

118712, 118723 E

A plasma ion implantation system includes a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber and a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, the system includes a plasma monitor configured to measure ion mass and energy in the process chamber and an analyzer configured to determine an operating condition of the system in response to the measured mass and energy. In another aspect, the system includes a data acquisition unit configured to acquire samples of the implant pulses and analyzer configured to determine an operating condition of the system based on the acquired samples.

7888636, Feb 15, 2011

Nov 1, 2007

11/933934

Bon Woong Koo - Andover MA, US
Jonathan Gerald England - Horsham, GB

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01J 49/40

250287, 250281, 250282, 250286, 2504921, 2504923

Techniques for measuring energy contamination using time-of-flight (TOF) sensor are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for detecting energy contamination in an ion beam using time-of-flight comprising directing an ion beam towards an entrance of a sensor, wherein the ion beam may include charged particles and neutral particles, blocking the ion beam periodically from entering the sensor and allowing a pulse of the ion beam to enter the sensor periodically using a gate mechanism, separating the charged particles and the neutral particles of the ion beam pulse based at least in part upon different transit times over a distance caused by variations in at least one of mass and energy associated with the charged particles and the neutral particles, and detecting at least one of the charged particles and the neutral particles separately at a detector based at least in part upon the different transit times.