Inventors:
Barak Maoz - Highland Park NJ
Assignee:
Grumman Aerospace Corporation - Bethpage NY
International Classification:
H01P 122
Abstract:
A variable attenuator having first and second branch circuits configured in bridged T, T or PI topologies, each of the branch circuits having at least one voltage variable FET resistor. The voltage variable FET resistor includes a FET network comprising a plurality of FET segments each of which have a predetermined gate width and a voltage divider network including a plurality of fixed resistors coupled to the gates of the plurality of FET segments for providing a different predetermined gate voltage to each of the FET segments. The gate width of each of the FET segments and the resistance of each of the fixed resistors is chosen to provide a predetermined relationship between the control voltage and the channel resistance of the voltage variable FET resistor, to thereby provide a preselected relationship between the control voltage applied to the first branch circuit and the attenuation ratio of the attenuator.