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Jeffry M Bulson

from Hopewell Junction, NY
Age ~66

Jeffry Bulson Phones & Addresses

  • 545 Van Wyck Lake Rd, Hopewell Junction, NY 12533 (845) 896-1123
  • 6 Van Wyck Lake Rd, Hopewell Junction, NY 12533 (845) 896-1123
  • East Fishkill, NY
  • 502 Prairie Crossing Dr, Mahomet, IL 61853
  • Burke, VA
  • Owego, NY
  • Champaign, IL
  • Staatsburg, NY

Work

Company: Eden park illumination, inc Mar 2009 Position: Senior r&d engineer

Education

School / High School: New York University- New York, NY Jan 1983 Specialities: Physics

Skills

SPECIALTIES: plasma physics; thin-film s... • FTIR spectroscopy • spectrophotometry • optical emission spectroscopy • spectroscopic ellipsometry • thermal desorption spectroscopy • residual gas analysis (mass spectroscopy) • and network analyzer measurements. COMPU... • Excel • PowerPoint • Access • Outlook • and Project; COSMOS • IES Amperes • Spice • PVDPro • TFCalc • SRIM • VacTran • and VacSim; MathCAD • OriginPro • and AutoCAD; LabView • LabWindows • IDL • FORTRAN • and BASIC

Industries

Medical Devices

Professional Records

License Records

Jeffry Mark Bulson

Address:
545 Van Wyck Lk Rd, Hopewell Junction, NY 12533
License #:
A4282221
Category:
Airmen

Resumes

Resumes

Jeffry Bulson Photo 1

Senior Vacuum Systems Architect

Location:
545 Van Wyck Lake Rd, East Fishkill, NY 12533
Industry:
Medical Devices
Work:
Eden Park Illumination, Inc. - Champaign, IL Mar 2009 - Feb 2013
VP Technology Development

Panasonic Plasma Display Laboratory of America, Inc. - Highland, NY Apr 1997 - Jun 2008
Senior Research Scientist

Materials Research Corporation - Congers, NY Feb 1995 - Apr 1997
Development Engineer

Control Concepts Corporation - Binghamton, NY Oct 1992 - Jul 1994
Staff Research Engineer

Mission Research Corporation - Newington, VA Jan 1985 - Feb 1992
Research Physicist/Engineer
Education:
University of Iowa 1980 - 1982
M.S., Physics
Siena College 1976 - 1980
B.S., Physics
Skills:
R&D
Thin Films
Simulations
Sputtering
Plasma Physics
Engineering
Pvd
Process Simulation
Sensors
Characterization
Product Development
Manufacturing
Testing
Semiconductors
Physics
Engineering Management
Electronics
Laser Physics
Experimentation
Spectroscopy
Instrumentation
Optics
Process Integration
Labview
Design of Experiments
Plasma
Matlab
Nanotechnology
Metrology
Materials Science
Process Development
Ellipsometry
Lighting
Project Management
Semiconductor Industry
Signal Processing
Vacuum Science
Ftir
Microwave Engineering
Rf Engineering
Lightning Protection
Pulsed Power
Research and Development
Electrical Engineering
Program Management
Jeffry Bulson Photo 2

Jeffry Bulson Hopewell Junction, NY

Work:
EDEN PARK ILLUMINATION, INC

Mar 2009 to 2000
Senior R&D Engineer

PANASONIC PLASMA DISPLAY LABORATORY OF AMERICA, INC., Formerly PLASMACO, INC
Highland, NY
Apr 1997 to Jun 2008
Senior Research Scientist

MATERIALS RESEARCH CORPORATION, Sputtering Systems Division
Congers, NY
Feb 1995 to Apr 1997
Development Engineer

Dutchess Community College
Poughkeepsie, NY
Mar 1995 to May 1995
Adjunct Lecturer (Physics)

Control Concepts/Liebert
Binghamton, NY
Sep 1994 to Nov 1994
Independent Consultant

CONTROL CONCEPTS CORPORATION, Subsidiary of LIEBERT CORP
Binghamton, NY
Oct 1992 to Jul 1994
Staff Research Engineer

MISSION RESEARCH CORPORATION, Advanced Technology Division
Newington, VA
Jan 1985 to Feb 1992
Research Physicist/Engineer

The University of Iowa
Iowa City, IA
1980 to 1982
Research/Teaching Assistant (Plasma Physics)

Siena College
Loudonville, NY
1978 to 1980
Research Assistant/Tutor (Physics)

Argonne National Laboratory
Argonne, IL
Jun 1979 to Aug 1979
Undergraduate Research Participant

Education:
New York University
New York, NY
Jan 1983 to Jan 1984
Physics

The University of Iowa
Iowa City, IA
Jan 1980 to Jan 1983
M. S. in Physics

Siena College
Loudonville, NY
Jan 1976 to Jan 1980
B. S. in Physics

Skills:
SPECIALTIES: plasma physics; thin-film sputtering; process development; wave propagation; diagnostics; plasma sources; electromagnetics; RF; microwaves; lightning; EMP; materials research; chemical/electrical/optical characterization of thin films and surfaces; diagnostics/instrumentation; project/program management; laboratory management. TECHNICAL: SEM, FTIR spectroscopy, spectrophotometry, optical emission spectroscopy, spectroscopic ellipsometry, thermal desorption spectroscopy, residual gas analysis (mass spectroscopy), and network analyzer measurements. COMPUTER: Microsoft Word, Excel, PowerPoint, Access, Outlook, and Project; COSMOS, IES Amperes, Spice, PVDPro, TFCalc, SRIM, VacTran, and VacSim; MathCAD, OriginPro, and AutoCAD; LabView, LabWindows, IDL, FORTRAN, and BASIC

Business Records

Name / Title
Company / Classification
Phones & Addresses
Jeffry M. Bulson
Vice-President
Eden Park Illumination
Electrical/Electronic Manufacturing · Mfg Electric Lamps
903 N Country Fair Dr, Champaign, IL 61821
(217) 403-1866

Publications

Us Patents

Method And Apparatus For Determining Composition And Concentration Of Contaminants On A Film Encapsulated In A Plasma Display Panel

US Patent:
20090116021, May 7, 2009
Filed:
Oct 6, 2008
Appl. No.:
12/285462
Inventors:
Jeffry Mark Bulson - Hopewell Junction NY, US
International Classification:
G01N 21/55
US Classification:
356445
Abstract:
The instant disclosure describes a method for determining composition or concentration of contaminants on a film encapsulated inside a plasma display panel. The method further includes steps of transmitting a light beam through an internal reflection element into the substrate and a film coupled to a surface of the substrate to determine composition or concentration of contaminants formed on the film, receiving the light beam, reflected back from the surface of the film, through a second internal reflection element, and analyzing the light beam received through the second internal reflection element to determine the composition or the concentration of contaminants on the surface of the film.

Method Of Sealing And Spacing Planar Emissive Devices

US Patent:
20120202048, Aug 9, 2012
Filed:
Jan 12, 2012
Appl. No.:
13/349426
Inventors:
WALTER E. MASON - ALFRED NY, US
JEFFRY M. BULSON - HOPEWELL JUNCTION NY, US
International Classification:
B32B 5/16
B29C 65/52
US Classification:
428323, 1563096
Abstract:
A method of forming a planar emissive device, such as a flat fluorescent lamp or plasma display panel, including the steps of applying a frit paste including spherical spacers onto a broad face of a first planar substrate; setting the frit paste; coupling a second planar substrate to the frit paste; and flowing the frit paste to form a seal between the first and second substrate, wherein the gap size between the first and second substrate is substantially defined by the spacer diameter.

Planar Plasma Lamp And Method Of Manufacture

US Patent:
20120319559, Dec 20, 2012
Filed:
May 18, 2012
Appl. No.:
13/475749
Inventors:
JEFFRY M. BULSON - HOPEWELL JUNCTION NY, US
JAY E. POGEMILLER - NEW PALTZ NY, US
DAVID B. DEHAVEN - URBANA IL, US
WALTER E. MASON - ALFRED NY, US
CYRUS M. HERRING - URBANA IL, US
SUNG-JIN PARK - CHAMPAIGN IL, US
International Classification:
H01J 61/42
H01J 9/00
US Classification:
313485, 445 29
Abstract:
A lamp including a first and second lamp substrate with a first and second external electrode, respectively, and a first and second internal phosphor coating, respectively, wherein the first phosphor coating is a phosphor monolayer. A method of manufacturing a lamp, including screen-printing a phosphor monolayer on a first lamp substrate; screen-printing a phosphor layer on a second lamp substrate; joining the phosphor-coated faces of the first and second lamp substrates together with a seal; and joining a first and second electrode to the uncoupled exterior faces of the first and second lamp substrates, respectively.

Low Impedance Surge Protective Device Cables For Power Line Usage

US Patent:
53844297, Jan 24, 1995
Filed:
Jun 24, 1993
Appl. No.:
8/080507
Inventors:
Jeffry M. Bulson - Owego NY
C. Peter Rau - Apalachin NY
Assignee:
Emerson Electric Co. - St. Louis MO
International Classification:
H01B 1118
US Classification:
174102R
Abstract:
A coaxial cable (10) is for use in a power distribution network (N). The cable connects a surge protective device (SPD) in parallel with feeder lines (W1, W2) of the network. The SPD senses voltage surges on the feeder lines and clamps the voltages to a level at which loads (LD) connected downstream of the SPD are protected from excessive voltage levels. An inner conductor (12) and an outer conductor (14) have a dielectric material (16) separating them. The inner conductor is a round conductor, and the outer conductor forms a hollow cylinder in which the inner conductor and insulation material fit. A ratio of the inner diameter (D) of the outer conductor to the diameter (d) of the inner conductor is approximately 1. 05. Thus, the diameter of the inner conductor is relatively large compared with the inner diameter of the outer conductor. A relatively large diameter of the inner conductor serves to minimize the dc resistance of the cable.

Neutral-To-Ground Fault Sensing Circuit

US Patent:
54326672, Jul 11, 1995
Filed:
Sep 24, 1993
Appl. No.:
8/125735
Inventors:
C. Peter Rau - Apalacin NY
Jeffry M. Bulson - Owego NY
Assignee:
Emerson Electric Co. - St. Louis MO
International Classification:
H02H 900
US Classification:
361124
Abstract:
A transient voltage surge suppressor (10) is used in a single or poly-phase power distribution network (P). The surge suppressor connects in parallel between each phase (A, B, C) and neutral (N), each phase and electrical ground (G), and between neutral and ground. An improvement comprises an electrical circuit (30) for monitoring the loss of surge protection due to the occurrence of a current surge or voltage transient in a neutral-to-ground path (32). An MOV-type semiconductor (VR1) is connected in the ground-to-neutral path. The semiconductor is normally non-conducting, but switches into conduction when its voltage threshold is exceeded by a surge current or voltage transient. An excessive surge or transient causes the semiconductor to fail. Respective fuses (F1A, F2B) are connected in series with the semiconductor. These fuses clear (blow) upon a semiconductor failure to create an open circuit neutral-to-ground path.

Planar Plasma Lamp And Method Of Manufacture

US Patent:
20150294852, Oct 15, 2015
Filed:
Nov 13, 2014
Appl. No.:
14/540421
Inventors:
Jeffry M. Bulson - Hopewell Junction NY, US
Jay E. Pogemiller - New Paltz NY, US
David B. Dehaven - Urbana IL, US
Walter E. Mason - Alfred NY, US
Cyrus M. Herring - Urbana IL, US
Sung-Jin Park - Champaign IL, US
International Classification:
H01J 61/48
H01J 9/22
H01J 9/26
Abstract:
A lamp including a first and second lamp substrate with a first and second external electrode, respectively, and a first and second internal phosphor coating, respectively, wherein the first phosphor coating is a phosphor monolayer. A method of manufacturing a lamp, including screen-printing a phosphor monolayer on a first lamp substrate; screen-printing a phosphor layer on a second lamp substrate; joining the phosphor-coated faces of the first and second lamp substrates together with a seal; and joining a first and second electrode to the uncoupled exterior faces of the first and second lamp substrates, respectively.
Jeffry M Bulson from Hopewell Junction, NY, age ~66 Get Report